Power Electronics devices form an important part of EV vehicles and high power applications. The major moto while designing electronics here is consuming as much low power as possible. The word we hear in today design world is sustainability. Silicon Carbide (SiC) has good efficiency, durability. SiC replaces the silicon material in devices. Silicon Carbide reduces the switching losses (due to better ON Resistance) and increases efficiency. SiC can operate at higher temperatures, switch at higher frequencies which are an advantage. The band gap and electric field breakdown value are much higher than Silicon. Thermal Conductivity is another advantage of Silicon Carbide. To summarize, the major advantages of SiC are:
- Better Thermal conductivity
- Higher Efficiency
- Higher Switching frequency
- Lower Switching losses
- High Power Density
- Higher voltage of operation
- Reliability
Major Applications:
- Solar inverters
- EV Segment
The drawback with Silicon Carbide compared to Silicon is the cost factor.
Silicon Carbide and Gallium Nitride are important materials going forward for the power semiconductors. The major advantage of these device is the compliance to Automotive standards.
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