World’s first industrial GaN power transistor with a built-in Schottky diode

 

Traditional GaN FETs unlike Si MOSFETs, lack a body diode, relying on channel conduction when reversed, which incurs higher voltage drop and losses. An external Schottky diode is often used with GaN transistors to improve efficiency and reliability, especially in hard-switching applications like buck converters, motor drives, and PFC stages. During dead time, adding a fast, low-voltage Schottky diode provides a better current. CoolGaN Transistor G5 series from Infineon is the first GaN transistor with built in schottky diode.